Welcome to Gong Xiao's Group

Gong Xiao

Assistant Professor

Dr. Gong Xiao is an Assistant Professor at the National University of Singapore (NUS). He obtained his B. Eng. (Hon.) degree in Electrical Engineering from the Beijing Institute of Technology (BIT), and his Ph. D. degree in Electrical Engineering from NUS in June 2013. He was also a Visiting Scholar at the Massachusetts Institute of Technology (MIT), from May to August 2014. His research aims to enable a new generation of deeply-scaled transistors by employing high-mobility channels with the goal of extending Moore’s law beyond the scaling limits of Si (“More-Moore”) and develop “More-than-More” technologies to provide further value to semiconductor chips by incorporating functionalities that do not necessarily scale according to Moore’s law.


Latest Highlights!

    • April 9th, 2022: Congratulate Kaizhen on winning the Best Student Paper Award (BSPA) for VLSI Symposium on Technology 2021. This is a very prestigious award. Each year, only one Best Student Paper Award is given based on the quality of the paper and the presentation. This is the second time that our group has clinched this award (Lei Dian won this award in 2017). Award ceremony will be held during the 2022 VLSI Symposium, in Honolulu, Hawaii. As the award winner, Kaizhen is invited to the 2022 symposium and will receive a monetary award and a certificate there. His travel expense, including flight, accommodation, and the registration fee will also be covered by the symposium.

    • April 9th, 2022: Congratulations to Haibo on his paper being selected as a conference highlight and also selected for the publicity & press releases of the conference in VLSI Symposium 2022. Each year, about 10 papers are selected as the highlight papers in VLSI symposium on Technology which are recognized as highly significant from all the accepted papers. Publicity & press releases will also be given for these highlight papers. Great job, Haibo!

    • April 7th, 2022: Congratulations to Shao Rui on the acceptance of the paper in Photonics Research titled “Generalized Robust Training Scheme using Genetic Algorithm for Optical Neural Networks with Imprecise Components”.

    • February 20th, 2022: Congratulations to Liang Jie and Sun Chen on the acceptance of the paper in IEEE Transactions on Electron Devices titled “Strained Silicon-on-Insulator Platform for Co-integration of Logic and RF—Part II: Comb-like Device Architecture”.

    • Janurary 20th, 2022: Congratulations to Wang Haibo on his paper accepted in IEEE Transactions on Electron Devices titled “Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si Substrates”.

    • November 17th, 2021: Congratulations to Zhou Zuopu and Jiao Leming on the acceptance of the paper in IEEE Electron Device Letters entitled “Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling with Dynamic Response and Multi-Domain Characteristics”.