Welcome to Gong Xiao's Group

Gong Xiao

Asstistant Professor


Dr. Gong Xiao is an Assistant Professor at the National University of Singapore (NUS). He obtained his B. Eng. (Hon.) degree in Electrical Engineering from the Beijing Institute of Technology (BIT), and his Ph. D. degree in Electrical Engineering from NUS in June 2013. He was also a Visiting Scholar at the Massachusetts Institute of Technology (MIT), from May to August 2014. His research aims to enable a new generation of deeply-scaled transistors by employing high-mobility channels with the goal of extending Moore’s law beyond the scaling limits of Si (“More-Moore”) and develop “More-than-More” technologies to provide further value to semiconductor chips by incorporating functionalities that do not necessarily scale according to Moore’s law.

 

Latest Highlight!


    • August 27th, 2019: Warmly welcome Liang Jie and Zhang Gong to join our group!

    • Dr. Gong was invited to give a talk at the 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII) to be held in Sendai, Japan, on Nov. 27-30, 2019.

    • Congratulations to Wu Ying on the acceptance of the paper in IEEE Electron Device Letters entitled “Thermal Stability and Sn Segregation of Low-Resistance Ti/p-Ge0.95Sn0.05 Contact”.

    • July 20th, 2019: Warmly welcome Zhou Zuopu to join our group!

    • July 8th, 2019: Warmly welcome Wang Haibo to join our group!

    • June 19th, 2019: Congratulations to Sun Chen for getting the Best Paper Award in ICICDT 2019

    • June 4th, 2019: Warmly welcome postdoctor Wang Xinke to join our group!

    • May 27th, 2019: Warmly welcome visiting professor Zhang Lujun to join our group!

    • May 1st, 2019: Congratulations to Sun Chen on the acceptance of the paper in ICICDT 2019 entitled “Performance Evaluation of Static Random Access Memory (SRAM) based on Negative Capacitance FinFET”.

    • Congratulations to Lei Dian on the acceptance of the paper in Journal of Electron Device Society (JEDS) entitled “High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate”.

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