Welcome to Gong Xiao's Group

Gong Xiao

Assistant Professor


Dr. Gong Xiao is an Assistant Professor at the National University of Singapore (NUS). He obtained his B. Eng. (Hon.) degree in Electrical Engineering from the Beijing Institute of Technology (BIT), and his Ph. D. degree in Electrical Engineering from NUS in June 2013. He was also a Visiting Scholar at the Massachusetts Institute of Technology (MIT), from May to August 2014. His research aims to enable a new generation of deeply-scaled transistors by employing high-mobility channels with the goal of extending Moore’s law beyond the scaling limits of Si (“More-Moore”) and develop “More-than-More” technologies to provide further value to semiconductor chips by incorporating functionalities that do not necessarily scale according to Moore’s law.

 

Latest Highlight!


    • December 30th, 2020: Congratulations to Samanta and Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Amorphous InGaZnO Thin-Film Transistors with Sub-10 nm Channel Thickness and Ultra-Scaled Channel Length”.

    • December 4th, 2020: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Hybrid Design using Metal-Oxide-Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications”.

    • November 1st, 2020: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “High Field Temperature Independent Field-Effect Mobility of Amorphous-Indium-Gallium-Zinc-Oxide Thin Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Down-Scaling”.

    • October 31st, 2020: Congratulations to Zhou Zuopu and Zhou Jiuren on the acceptance of the paper in IEEE Electron Device Letters entitled “A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOx Ferroelectric Film”.

    • October 16th, 2020: Congratulations to Zhou Jiuren and Zhou Zuopu on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Temperature Dependence of Ferroelectricity in Al-doped HfO2 Featuring a High Pr of 23.7 μC/cm2”.

    • October 2nd, 2020: Dr. Gong was invited to give an invited talk at 11th International Conference on Computer Aided Design for TFT Technologies (CAD-TFT), which is to be held virtually during November 9th to 11th, 2020.

    • September 11th, 2020: Warmly welcome Chen Guanyu, Kong Qiwen, Chen Yue and Zheng Zijie to join our group!

    Read More >>