Welcome to Gong Xiao's Group

Gong Xiao

Assistant Professor


Dr. Gong Xiao is an Assistant Professor at the National University of Singapore (NUS). He obtained his B. Eng. (Hon.) degree in Electrical Engineering from the Beijing Institute of Technology (BIT), and his Ph. D. degree in Electrical Engineering from NUS in June 2013. He was also a Visiting Scholar at the Massachusetts Institute of Technology (MIT), from May to August 2014. His research aims to enable a new generation of deeply-scaled transistors by employing high-mobility channels with the goal of extending Moore’s law beyond the scaling limits of Si (“More-Moore”) and develop “More-than-More” technologies to provide further value to semiconductor chips by incorporating functionalities that do not necessarily scale according to Moore’s law.

 

Latest Highlight!


    • Feburary 14th, 2021: Congratulations to Zhang Jishen on the acceptance of the paper in CLEO 2021 entitled “Triple-Mesa InGaAs/InAlAs Single-Photon Avalanche Diode Array for 1550 nm Photon Detection”.

    • Feburary 10th, 2021: Congratulations to Sun Chen, Xu Haiwen and Liang Jie on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Strained Silicon-on-Insulator Platform for Co-integration of Logic and RF—Part I: Implant-Induced Strain Relaxation”.

    • December 30th, 2020: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE EDTM 2021 entitled “Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness”.

    • December 30th, 2020: Congratulations to Samanta and Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Amorphous InGaZnO Thin-Film Transistors with Sub-10 nm Channel Thickness and Ultra-Scaled Channel Length”.

    • December 4th, 2020: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Hybrid Design using Metal-Oxide-Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications”.

    • November 1st, 2020: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “High Field Temperature Independent Field-Effect Mobility of Amorphous-Indium-Gallium-Zinc-Oxide Thin Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Down-Scaling”.

    • October 31st, 2020: Congratulations to Zhou Zuopu and Zhou Jiuren on the acceptance of the paper in IEEE Electron Device Letters entitled “A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOx Ferroelectric Film”.

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