Welcome to Gong Xiao's Group

Gong Xiao

Assistant Professor


Dr. Gong Xiao is an Assistant Professor at the National University of Singapore (NUS). He obtained his B. Eng. (Hon.) degree in Electrical Engineering from the Beijing Institute of Technology (BIT), and his Ph. D. degree in Electrical Engineering from NUS in June 2013. He was also a Visiting Scholar at the Massachusetts Institute of Technology (MIT), from May to August 2014. His research aims to enable a new generation of deeply-scaled transistors by employing high-mobility channels with the goal of extending Moore’s law beyond the scaling limits of Si (“More-Moore”) and develop “More-than-More” technologies to provide further value to semiconductor chips by incorporating functionalities that do not necessarily scale according to Moore’s law.

 

Latest Highlight!


    • April 1st, 2021: Congratulations to Wang Haibo on the acceptance of the paper in VLSI 2021 entitled “First Demonstration of Waveguide-Coupled Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on the SOI Platform for 2000 nm Wavelength Optoelectronic Integrated Circuit”.

    • April 1st, 2021: Congratulations to Sun Chen on the acceptance of the paper in VLSI 2021 entitled “First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 108 Cycles”.

    • April 1st, 2021: Congratulations to Xu Haiwen on the acceptance of the paper in VLSI 2021 entitled “Ultra-low Specific Contact Resistivity (3.2*10-10 ohm-cm2) of Ti/Si0.5Ge0.5 Contact Deep Insights into the Role of Interface Reaction and Ga Co-doping”.

    • April 1st, 2021: Congratulations to Zhang Jishen on the acceptance of the paper in VLSI 2021 entitled “First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection”.

    • April 1st, 2021: Congratulations to Han Kaizhen on the acceptance of the paper in VLSI 2021 entitled “First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 µA/µm”.

    • April 1st, 2021: Congratulations to Wang Haibo on the acceptance of the paper in Optics Letters entitled “High-speed and high-responsivity p-i-n waveguide photodetector at 2 μm wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layer”.

    • Feburary 14th, 2021: Congratulations to Zhang Jishen on the acceptance of the paper in CLEO 2021 entitled “Triple-Mesa InGaAs/InAlAs Single-Photon Avalanche Diode Array for 1550 nm Photon Detection”.

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