Publications

Journal Publication

Invited:

  1. S. Gupta, X. Gong, R. Zhang, Y.-C. Yeo, S. Takagi, and K. C. Saraswat, “New materials for post-silicon computing: Ge and GeSn devices,” Materials Research Society Bulletin, vol. 39, no. 8, pp. 678, Aug. 2014.

  2. X. Gong, B. Liu, and Y.-C. Yeo, “Gate stack reliability of MOSFETs with high mobility channel materials: Bias temperature instability,” IEEE Trans. Devices and Material Reliability, vol. 13, no. 9, pp.524, Sep. 2013.

Regular:

  1. Y. Wu, D. Lei, and X. Gong, “Theoretical investigation of metal/n-Ge1-xSnx (0<x<0.11) contacts using transfer matrix method,” J. Applied Physics, vol. 125, no. 10, 105102, 2019. (Corresponding Author)

  2. S. Xu, W. Wang, Y. Huang, Y. Dong, S. M. Pana, H. Wang, X. Gong, and Y.-C. Yeo, “High speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate,” Optics Express, vol. 27, no. 4, pp. 5798-5813, 2019. (Corresponding Author)

  3. L. Wang, W. Liao, S. Xu, X. Gong, C. Zhu, and K. Ang, “Unipolar N-type conduction in black phosphorous induced by atomic layer deposited MgO,” IEEE Electron Device Letter, vol. 40, no. 3, pp. 471-474, 2019.

  4. D. Lei, K. Han, Y. Wu, Z. Liu, and X. Gong, “Investigation on temperature dependent DC characteristics of gallium oxide metal-oxide-semiconductor field-effect transistors from 25° C to 300° C,” Applied Physics Express, vol. 12, no. 4, pp. 1, 2019. (Corresponding Author)

  5. X. Zhang, X. Gong, and G. Liang, “Analysis on performance of ferroelectric NC-FETs based on real-space Gibbs free energy with atomic channel structure,” IEEE Trans. Electron Devices, vol. 66, no. 2, pp. 1100-1106, 2019.

  6. R. Katal, S. M. Panah, E. Kong, N. D. Khiavi, M. H. Farahani, and X. Gong, “ Nanocrystal-engineered thin CuO film photocatalyst for visible-light-driven photocatalytic degradation of organic pollutant in aqueous solution,” Catalysis Today , 2018. (Corresponding Author)

  7. Y. Wu, W. Wang, S. M. Panah, Y. Li, K. Han, L. He, Z. Zhang, D. Lei, S. Xu, Y. Kang, X. Gong, and Y.-C. Yeo, “Sub-10-9 Ω·cm2 specific contact resistivity (down to 4.4 × 10-10 Ω·cm2) for metal contact on Ga and Sn surface-segregation GeSn film,” IEEE Trans. Electron Devices, vol. 65, no. 12, pp. 5275-5281, 2018. (Corresponding Author)

  8. D. Lei, K. H. Lee, Y. Huang, W. Wang, S. M. Panah, S. Yadav, A. Kumar, Y. Dong, Y. Kang, S. Xu, Y. Wu, C. S. Tan, X. Gong, and Y.-C. Yeo, “Germanium-tin (GeSn) p-channel fin field-effect-transistor fabricated on a novel GeSn-on-insulator substrate,” IEEE Trans. Electron Devices, vol. 65, no. 9, pp. 3754-3761, 2018. (Corresponding Author)

  9. L. Wang, Y. Li, X. Feng, K. Ang, X. Gong, A. Thean, and G. Liang, “A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors,” J. Applied Physics, vol. 124, no. 3, 034302, 2018.

  10. S. Xu, Y. Huang, K. Lee, W. Wang, Y. Dong, D. Lei, S. Panah, C. Tan, X. Gong, and Y.-C. Yeo, “GeSn lateral pin photodetector on insulating substrate,” Optics Express, vol. 26, no. 13, pp. 17312-17321, 2017. (Corresponding Author)

  11. X. Zhang, X. Gong, and G. Liang, “Effects of scalability of floating metal on NC-FETs based on real-space atomic model,” Semiconductor Science and Technology, vol. vol. 39, no. 8, 2018.

  12. Y. Li, K. Han, Y. Kang, E. Y. J. Kong, and X. Gong, “Extraction of polarization dependent damping constant for dynamic evaluation of ferroelectric films and devices,” IEEE Electron Device Letter, vol. 39, no. 8, pp. 1211-1214, 2018. (Editor’s Pick-up) (Corresponding Author)

  13. L. Wang, Y. Li, X. Gong, A. Thean, and G. Liang, “A physics-based compact model for transition metal dichalcogenides transistors with the band-tail effect,” IEEE Electron Device Letter, vol. 30, no. 5, pp. 761-764, 2018.

  14. Y. Wu, Y. Li, W. Wang, X. Gong, and Y.-C. Yeo, “An improved methodology for accurate extraction of ultra-low specific contact resistivity of alloyed contacts using nanoscale transmission line method,” IEEE Electron Device Letter, vol. 39, no. 6, pp. 803-806, 2018. (Corresponding Author)

  15. W. Wang, D. Lei, Y.-C. Huang, K. H. Lee, W.-K. Loke, Y. Dong, S. Xu, C. S. Tan, H. Wang, S.-F. Yoon, X. Gong, and Y.-C. Yeo, “High performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform,” Optics Express, vol. 26, no. 8, pp. 10305-10314, 2017. (Corresponding Author)

  16. Y. Kang, Y. C. Huang, K. H. Lee, S. Bao, W. Wang, D. Lei, S. M. Panah, Y. Dong, Y. Wu, S. Xu, C. S. Tan, X. Gong, and Y.-C. Yeo, “Strain relaxation of germanium-tin (GeSn) fins,” AIP Advances, vol. 8, no. 2, 025111, 2018. (Corresponding Author)

  17. S. M. Panah, S. Zhuk, H. Tan, X. Gong, and G. K. Dalapati, “Palladium nanostructure incorporated cupric oxide thin film with strong optical absorption, compatible charge collection and low recombination loss for low cost solar cell applications,” Nano Energy, vol. 46, pp. 158-167, 2018.

  18. S. M. Panah, Y. Wu, D. Lei, A. Kumar, Y.-C. Yeo, and X. Gong, “Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: improved interfacial quality and extraction methodology,” J. Applied Physics, vol. 123, no. 2, 024508, 2018. (Corresponding Author)

  19. D. Lei, K. H. Lee, S. Bao, W. Wang, S. M. Panah, C. S. Tan, E. Tok, X. Gong, and Y.-C. Yeo, “Thermal stability of germanium-tin (GeSn) fins,” Applied Physics Letters, vol. 11, no. 25, 252103, 2017. (Corresponding Author)

  20. W. Wang, D. Lei, Y. Dong, Z. Zhang, J. Pan, X. Gong, E. Tok, and Y.-C. Yeo, “Kinetics of plasma oxidation of germanium-tin (GeSn),” Applied Surface Science, vol. 425, pp. 95, 2017. (Corresponding Author)

  21. Y. Wu, S. Luo, W. Wang, S. M. Panah, D. Lei, G. Liang, X. Gong, and Y.-C. Yeo, “Ultra-low specific contact resistivity (1.4 × 10-9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film,” J. Applied Physics, vol. 122, no. 22, 224503, 2017. (Corresponding Author)

  22. A. Kumar, S.-Y. Lee, S. Yadav, K. H. Tan, W. K. Loke, Y. Dong, K. H. Lee, S. Wicaksono, G. C. Liang, S. F. Yoon, D. Antoniadis, X. Gong, and Y. C. Yeo, “Integration of InGaAs MOSFETs and GaAs/AlGaAs lasers on Si substrate for advanced opto-electric integrated circuits (OEICs),” Optics Express, vol. 25, no. 25, pp. 31853, 2017. (Corresponding Author)

  23. X. Nguyen, S. Yadav, K. H. Lee, D. Kohen, A. Kumar, R. Made, K. E. Lee, S. J. Chua, X. Gong, and E. Fitzgerald, “MOCVD growth of high quality InGaAs HEMT layers on large scale Si wafers for heterogeneous integration with Si CMOS,” IEEE Trans. On Semiconductor Manufacturing, vol. 30, no. 4, pp. 456, 2017.

  24. Y. Li, Y. Kang, and X. Gong, “Evaluation of negative capacitance ferroelectric MOSFET for analog circuit applications,” IEEE Trans. Electron Devices, vol. 64, no. 10, pp. 4317-4321, 2017. (Corresponding Author)

  25. W. Wang, Y. Dong, S.-Y. Lee, W. K. Loke, D. Lei, S. F. Yoon, X. Gong, and Y.-C. Yeo, “Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range,” Optics Express, vol. 25, no. 16, pp. 18502-18507, July 2017. (Corresponding Author)

  26. Y. Dong, W. Wang, S. Xu, D. Lei, X. Gong, X. Guo, H. Wang, S. Y. Lee, W. K. Loke, S.-F. Yoon, and Y.-C. Yeo, “Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth,” Optics Express, vol. 25, no. 14, pp. 15818-15827, July 2017.

  27. W. Wang, D. Lei, Y. Dong, Z. Zhang, J. Pang, X. Gong, E. S. Tok, Y.-C. Yeo, “Kinetics of plasma oxidation of germanium-tin (GeSn),” Applied Surface Science, vol. 425, pp. 95-99, June 2017.

  28. W. Wang, D. Lei, Y. Dong, X. Gong, E. S. Tok, and Y.-C. Yeo, “Digital etch technique for forming ultra-scaled germanium-tin (Ge1−xSnx) fin structure," Scientific Reports, vol. 7, pp. 1835, May, 2017.

  29. A. Kumar, S.-Y. Lee, S. Yadav, K. H. Tan, W. K. Loke, S. Wicaksono, D. Li, S. M. Panah, G. C. Liang, S. F. Yoon, X. Gong, D. Antoniadis, and Y. C. Yeo, “Monolithic integration of InGaAs n-FETs and lasers on Ge substrate,” Optics Express, vol. 25, no.5, pp. 5146, Mar. 2017. (Corresponding Author)

  30. S. Yadav, K. H. Tan, A. Kumar, K. H. Goh, G. C. Liang, S. F. Yoon, X. Gong, and Y. C. Yeo, “Monolithic integration of InAs Quantum-Well n-MOSFETs and ultrathin body Ge p-MOSFETs on a Si substrate.” IEEE Trans. Electron Devices, vol. 64, no. 2, pp. 353, Feb. 2017. (Corresponding Author)

  31. D. Kohen, X. S. Nguyen, S. Yadav, A. Kumar, R. I. Made, C. Heidelberger, X. Gong, K. H. Lee, K. E. Lee, Y. C. Yeo, S. F. Yoon, and E. Fitzgerald, “Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer,” AIP Advances, vol. 6, no. 8, pp. 085106, Aug. 2016.

  32. D. Lei, K. H. Lee, S. Bao, W. Wang, B. Wang, X. Gong, C. S. Tan, and Y.-C. Yeo, “GeSn-on-insulator substrate formed by direct wafer bonding,” Applied Physics Letters, vol. 109, no. 2, 022106, Jul. 2016. (Corresponding Author)

  33. Y. Dong, W. Wang, S. Y. Lee, D. Lei, X. Gong, W. K. Loke, S.-F. Yoon, G. Liang, and Y.-C. Yeo, “Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength,” Semiconductor Science and Technology, vol. 31, no. 9, pp. 095001, Jul. 2016.

  34. K.-H. Goh, S. Yadav, K. L. Low, G. Liang, X. Gong, and Y.-C. Yeo, “Gate-all-around In0.53Ga0.47As junctionless nanowire FET with tapered source/drain structure,” IEEE Trans. Electron Devices, vol. 63, no. 3, pp. 1027, Mar. 2016. (Corresponding Author)

  35. D. Lei, W. Wang, Z. Zhang, J. Pan, X. Gong, G. Liang, E.-S. Tok, and Y.-Ch. Yeo, “Ge0. 83Sn0. 17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality,” J. Applied Physics, vol. 119, no. 2, 024502, Jan. 2016. (Corresponding Author)

  36. Q. Zhou, E. B. L. Ong, S. L. Lim, S. Vajandar, T. Osipowicz, X. Gong, E. S. Tok, and Y.-C. Yeo, “Single crystalline germanium-lead formed by laser-induced epitaxy,” ECS Journal of Solid State Science and Technology, vol. 5, no. 6, pp. 353, Jan. 2016.

  37. Y. Dong, B. L. Ong, W. Wang, Z. Zhang, J. Pan, X. Gong, E.-S. Tok, G. Liang, and Y.-C. Yeo, “Etching of germanium-tin using ammonia peroxide mixture,” J. Applied Physics, vol. 118, no. 24, 245303, Dec. 2015.

  38. Y. Dong, W. Wang, D. Lei, X. Gong, Q. Zhou, S.-Y. Lee, W. K. Loke, S.-F. Yoon, E. S. Tok, G. Liang, and Y.-C. Yeo, “Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique,” Optics Express, vol. 23, no.4, pp. 18611, July. 2015.

  39. Z. P. Ling, R. Yang, J. W. Chai, S. J. Wang, W. S. Leong, Y. Tong, D. Lei, Q. Zhou, X. Gong, D. Z. Chi, and K.-W. Ang, “Large-scale two-dimensional MoS2 photodetectors by magnetron sputtering,” Optics Express, vol. 23, no.10, pp. 13580, May. 2015.

  40. Y. Dong, W. Wang, X. Xu, X. Gong, D. Lei, Q. Zhou, Z. Xu, W. K. Loke, S.-F. Yoon, G. Liang, and Y.-C. Yeo, “Germanium-tin on Si avalanche photodiode: Device design and technology demonstration,” IEEE Trans. Electron Devices, vol. 61, no, 1, pp. 128, Jan. 2015.

  41. M. H. S. Owen, Q. Zhou, X. Gong, Z. Zheng, J. S. Pan, W. K. Loke, S. Wicaksono, S. F. Yoon, E. S. Tok, and Y.-C. Yeo, “Band alignment study of lattice-matched In0.49Ga0.51P and Ge using x-ray photoelectron spectroscopy,” Applied Physics Letters, vol. 105, no. 10, 101604, Sep. 2014.

  42. Q. Zhou, T. K. Chan, S. L. Lim, C. Zhan, T. Osipowicz, X. Gong, E. S. Tok, and Y.-C. Yeo, “Single crystalline germanium-lead alloy germanium substrate formed by pulsed laser epitaxy,” ECS Solid State Letters, vol. 3, no. 8, pp. P91, Jun. 2014.

  43. Y. Yang, G. Han, P. Guo, W. Wang, X. Gong, L. Wang, K. L. Low, and Y.-C. Yeo, “Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration,” IEEE Trans. Electron Devices, vol. 60, no. 12, pp. 4048, Dec. 2013.

  44. P. Guo, G. Han, X. Gong, B. Liu, Y. Yang, W. Wang, Q. Zhou, J. Pan, Z. Zhang, E. S. Tok, and Y.-C. Yeo, “Ge0.97Sn0.03 p-channel MOSFETs: Impact of Si surface passivation layer thickness and post metal annealing,” J. Applied Physics, vol. 114, 044510, Jul. 2013.

  45. B. Liu, X. Gong, C. Zhan, G. Han, H.-C. Chin, M.-L. Ling, J. Li, Y. Liu, J. Hu, N. Daval, C. Veytizou, D. Delprat, B.-Y. Nguyen, and Y.-C. Yeo, “Germanium multi-gate field-effect transistors formed on germanium-on-insulator substrate,” IEEE Trans. Electron Devices, vol. 60, no. 6, pp. 1852, Jun. 2013.

  46. X. Zhang, H. X. Guo, Z. Zhu, X. Gong, and Y.-C. Yeo, “In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric,” Solid-State Electronics, vol. 84, pp. 83, Jun. 2013.

  47. X. Gong, G. Han, B. Liu, L. Wang, W. Wang, Y. Yang, E. Kong, S. Su, B. Cheng, and Y.-C. Yeo, “Sub-400 ºC Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS,” IEEE Trans. Electron Devices, vol. 60, no. 4, pp. 1640, May 2013.

  48. X. Gong, G. Han, F. Bai, S. Su, P. Guo, Y. Yang, R. Cheng, D. Zhang, G. Zhang, C. Xue, B. Cheng, J. Pan, Z. Zhang, E. S. Tok, D. Antoniadis, and Y.-C. Yeo, “Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with sub-400 °C Si2H6 passivation,” IEEE Electron Device Letters, vol. 34, no. 3, pp. 339, Mar. 2013.

  49. L. Wang, S. Su, W. Wang, X. Gong, Y. Yang, P. Guo, G. Zhang, C. Xue, B. Cheng, G. Han, and Y.-C. Yeo, “Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation,” Solid-State Electronics, vol. 83, pp. 66, Feb. 2013.

  50. R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and strained patterned germanium-tin structures: A Raman scattering study,” ECS Journal of Solid State Science and Technology, vol. 2, no. 4, pp. 138, Jan. 2013.

  51. L. Wang, S. Su, W. Wang, Y. Yang, Y. Tong, B. Liu, P. Guo, X. Gong, G. Zhang, C. Xue, B. Cheng, G. Han, and Y.-C. Yeo, “Germanium-tin n+/p junction formed using phosphorus ion implant and 400 °C rapid thermal anneal,” IEEE Electron Device Letters, vol. 33, no. 11, pp. 1529, Nov. 2012.

  52. B. Liu, X. Gong, G. Han, P. S. Y. Lim, Y. Tong, Q. Zhou, Y. Yang, N. Daval, C. Veytizou, D. Delprat, B.-Y. Nguyen, and Y.-C. Yeo, “High performance germanium Ω-gate MuGFET with Schottky-barrier nickel germanide source/drain and low temperature disilane passivated gate stack,” IEEE Electron Device Letters, vol. 33, no. 10, pp. 1336, Oct. 2012.

  53. X. Zhang, H. X. Guo, X. Gong, and Y.-C. Yeo, “Multiple-gate InGaAs channel n-MOSFETs with self-aligned Ni-InGaAs contacts,” ECS Journal of Solid State Science and Technology, vol. 1, no. 2, pp. 82, Jul. 2012.

  54. Z. Zhu, X. Gong, Ivana, and Y.-C. Yeo, “In0.53Ga0.47As channel N-MOSFETs with shallow metallic source and drain extensions and offset n+ doped regions for leakage suppression,” Japanese J. Applied Physics, vol. 51, no. 4, 02BF03-1, Apr. 2012.

  55. X. Zhang, Ivana, H. Guo, X. Gong, Q. Zhou, and Y.-C. Yeo, “A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs,” J. Electrochemical Society, vol. 159, no. 5, pp. H511, Mar. 2012.

  56. Ivana, X. Zhang, H. Guo, X. Gong, Z. Zhang, J. Pan, and Y.-C. Yeo, “Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As,” Applied Physics Letters, vol. 99, no. 1, 012105, Jul. 2011.

  57. X. Zhang, H. Guo, H.-Y. Lin, C.-C. Cheng, C.-H. Ko, C. H. Wann, G.-L. Luo, C.-Y. Chang, C.-H. Chien, Z.-Y. Han, S.-C. Huang, H.-C. Chin, X. Gong, S.-M. Koh, P. S. Y. Lim, and Y.-C. Yeo, “A self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors,” J. Vacuum Science and Technology B, vol. 29, no. 3, 032209, May 2011.

  58. X. Zhang, H. Guo, H.-Y. Lin, C.-C. Cheng, C.-H. Ko, C. H. Wann, G.-L. Luo, C.-Y. Chang, C.-H. Chien, Z.-Y. Han, S.-C. Huang, H.-C. Chin, X. Gong, S.-M. Koh, P. S. Y. Lim, and Y.-C. Yeo, “A self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors,” J. Vacuum Science and Technology B, vol. 29, no. 3, 032209, May 2011.

  59. X. Gong, H.-C. Chin, S.-M. Koh, L. Wang, Ivana, Z. Zhu, B. Wang, C. K. Chia, and Y.-C. Yeo, “Source/drain engineering for In0.7Ga0.3As n-channel metal-oxide-semiconductor field-effect transistors: raised source/drain with in situ doping for series resistance reduction,” Japanese J. Applied Physics, vol. 50, no. 4, 04DF01-1, Apr. 2011.

  60. X. Zhang, H. Guo, H.-Y. Lin, Ivana, X. Gong, Q. Zhou, Y.-R. Lin, C.-H. Ko, C. H. Wann, and Y.-C. Yeo, “Reduction of off-state leakage current in In0.7Ga0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization,” Electrochemical and Solid-State Letters, vol. 14, no. 5, pp. H212, Mar. 2011.

  61. H.-C. Chin, X. Gong, L. Wang, H. K. Lee, L. Shi, and Y.-C. Yeo, “III-V multiple-gate field-effect-transistors (MuGFETs) with high mobility In0.7Ga0.3As channel and epi-controlled retrograde-doped fin,” IEEE Electron Device Letters, vol. 32, no. 2, pp. 146, Feb. 2011.

  62. X. Gong, Ivana, H.-C. Chin, Z. Zhu, Y.-R Lin, C.-H. Ko, C. H. Wann, and Y.-C. Yeo, “Self-aligned gate-first In0.7Ga0.3As N-MOSFET with an InP capping layer for performance enhancement,” Electrochemical and Solid-State Letters, vol. 14, no. 3, pp. H117, Dec. 2010.

  63. S.-M. Koh, H.-S. Wong, X. Gong, C.-M. Ng, N. Variam, T. Henry, Y. Erokhin, G. S. Samudra, and Y.-C. Yeo, “Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement,” J. Electrochemical Society, vol. 157, no. 12, pp. H1088, Dec. 2010.

  64. X. Zhang, H. Guo, X. Gong, Q. Zhou, Y.-R. Lin, H.-Y. Lin, C.-H. Ko, C. H. Wann, and Y.-C. Yeo, “In0.7Ga0.3As channel n-MOSFET with self-aligned Ni-InGaAs source and drain,” Electrochemical and Solid-State Letters, vol. 14, no. 2, pp. H60, Nov. 2010.

  65. H.-C. Chin, X. Gong, L. Wang, and Y.-C. Yeo, “Fluorine incorporation in HfAlO gate dielectric for defect passivation and effect on electrical characteristics of In0.53Ga0.47As n-MOSFETs,” Electrochemical and Solid-State Letters, vol. 13, no. 12, pp. H440, Sep. 2010.

  66. H.-C. Chin, X. Gong, T. K. Ng, W. K. Loke, C. P. Wong, Z. Shen, S. Wicaksono, S. F. Yoon, and Y.-C. Yeo, “Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires,” J. Applied Physics, vol. 108, 024312, Jul. 2010.

  67. H.-C. Chin, X. Liu, X. Gong, and Y.-C. Yeo, “Silane and ammonia surface passivation technology for high mobility In0.53Ga0.47As MOSFETs,” IEEE Trans. Electron Devices, vol. 57, no. 5, pp. 973, May 2010.

  68. H.-C. Chin, X. Gong, X. Liu, and Y.-C. Yeo, “Lattice mismatched In0.4Ga0.6As source/drain stressors with in situ doping for str ained In0.53Ga0.47As channel n-MOSFETs,” IEEE Electron Device Letters, vol. 30, no. 8, pp. 805, Aug. 2009.

Conference Publication

Invited:

  1. X. Gong, Y.-C. Yeo, S. Xu, W. Wang, and Y. Dong, “Germanium-Tin photodetectors for two micron meters and beyond,” MRS Fall 2019, Boston, USA, Dec. 1 - 6, 2019.

  2. X. Gong, “Targeting mm-wave communications with wafer-level integration of InGaAs HEMTs and silicon CMOS,” Compound Semiconductors International Conference, Brussels, Belgium, Mar. 26-27, 2019.

  3. X. Gong, Y. Li, and D. Lei, “Evaluation of negative capacitance ferroelectric MOSFET for low power circuit applications,” 2018 International Conference on Solid-State Devices and Materials (SSDM), Tokyo, Japan, Sep. 09 - 13, 2018.

  4. X. Gong, W. Wang, S. Xu, and Y.-C. Yeo, “Germanium-Tin infrared photodetectors: materials, process, and devices,” IEEE Photonics Society Summer Topicals Meeting Series 2018, Hawaii, USA, July 9-11, 2018.

  5. X. Gong, D. Lei, K. H. Lee, C. S. Tan, and Y.-C. Yeo, “Multi-gate GeSn transistors enabled by wafer bonding technology,” IEEE-NEMS 2018, Singapore, Apr. 22 – 26, 2018.

  6. X. Gong, S. Yadav, K. H. Tan, Annie, K. L. Low, B. Jia, S.-F. Yoon, G. Liang, and Y.-C. Yeo, “Interfacial misfit technique: an enabler for hetero-integration of III-V and Ge-based transistors on silicon,” MRS Spring 2018, Arizona, USA, Apr. 3 - 6, 2018.

  7. X. Gong, A. Kumar, S.-Y. Lee, S. Yadav, K. H. Tan, S.-F. Yoon, G. Liang, and Y.-C. Yeo, “Toward low power and high speed OEICs: Monolithic integration of III-V transistors and lasers on Si substrate,” EMN Meeting on Epitaxy 2017, Barcelona, Spain, Sep. 11 - 15, 2017.

  8. X. Gong, S. Yadav, K. H. Goh, K. H. Tan, Annie, K. L. Low, B. Jia, S.-F. Yoon, G. Liang, and Y.-C. Yeo, “Enabling hetero-integration of III-V and Ge-based transistors on silicon with ultra-thin buffers formed by interfacial misfit technique,” 232nd Electrochemical Society Meeting, Honolulu, USA, Oct. 2 - 7, 2016.

  9. E. Fitzgerald, K. Lee, S.-F. Yoon, S. J. Chua, C. S. Tan, G. Ng, X. Zhou, X. Gong, J. S. Chang, L. S. Peh, C. C. Boon, D. Antoniadis, S. Yadav, X. Nguyen, D. Kohen, A. Kumar, L. Zhang, K. H. Lee, Z. H. Liu, S. B. Chain, T. Ge, and P. Choi, “SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-Micron CMOS process and design,” 232nd Electrochemical Society Meeting, Honolulu, USA, Oct. 2 - 7, 2016

  10. X. Gong, S. Yadav, K. H. Goh, K. H. Tan, Annie, K. L. Low, B. Jia, S.-F. Yoon, G. Liang, and Y.-C. Yeo, “Enabling hetero-integration of III-V and Ge-based transistors on silicon with ultra-thin buffers formed by interfacial misfit technique, ” 2016 International Conference on Solid-State Devices and Materials (SSDM), Tsukuba, Japan, Sep. 26 - 29, 2016.

  11. Y.-C. Yeo, X. Gong, M. J. V. Dal, G. Vellianitis, and M. Passlack, “Germanium-based transistors for future high performance and low power logic applications,” IEEE International Electron Device Meeting 2015 (IEDM 2015), Washington, DC USA, Dec. 7 - 9, 2015, pp. 28.

  12. X. Gong, Y. Yang, W. Wang, Q. Zhou, R. Cheng, D. Yuan, X. Xu, D. Lei, and Y.-C. Yeo, “Germanium-tin p-channel field effect transistor with low temperature Si2H6 passivation,” to appear in IEEE 226th Electrochemical Society Meeting, Cancun, Mexico, Oct. 5 - 10, 2014.

  13. X. Gong and Y.-C. Yeo, “Drive current performance of inversion mode Ge CMOS transistors,” to appear in International Conference on Solid-State Devices and Materials (SSDM), Tsukuba, Japan, Sep. 8 - 11, 2014.

  14. Y.-C. Yeo, X. Gong, P. Guo, Y. Yang, L. Wang, Y. Tong, K. L. Low, C. Zhan, R. Cheng, B. Liu, W. Wang, Q. Zhou, X. Xu, and Y. Dong, “Application of germanium-tin (GeSn) in field-effect transistors,” IEEE Nanotechnology Materials and Devices Conference (NMDC), Taiwan, Taiwan, Oct. 6 - 9, 2013.

  15. Y. Yang, P. Guo, W. Wang, X. Gong, L. Wang, K. L. Low, G. Han, and Y.-C. Yeo, “Germanium-tin tunneling field-effect transistor: Device design and experimental realization,” International Conference on Solid-State Devices and Materials (SSDM), Fukuoka, Japan, Sep. 24 - 27, 2013.

  16. Y.-C. Yeo, G. Han, X. Gong, L. Wang, W. Wang, Y. Yang, P. Guo, B. Liu, S. Su, G. Zhang, C. Xue, and B. Cheng, “Tin-incorporated source/drain and channel materials for field-effect transistors,” 222nd Electrochemical Society Meeting, Honolulu, HI USA, Oct. 7 - 12, 2012.

  17. Y.-C. Yeo, X. Zhang, H. Guo, S. Subramanian, X. Gong, Ivana, E. Y.-J. Kong, and Z. Zhu, “Self-aligned contact metallization for indium gallium arsenide channel field-effect transistors,” 12th International Workshop on Junction Technology, Shanghai, China, May 14 - 15, 2012.

  18. Y.-C. Yeo, H.-C. Chin, X. Gong, H. Guo, and X. Zhang, “III-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization,” 219th Electrochemical Society Meeting, Montreal, Canada, May 1 - 6, 2011. (Corresponding Author)

  19. Y.-C. Yeo, H.-C. Chin, X. Gong, H. Guo, and X. Zhang, “III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization,” 10th International Conference on Solid-State and Integrated-Circuit Technology, Shanghai, China, Nov. 1 - 4, 2010.

Regular:

  1. K. Han, Y. Wu, Y. Huang, S. Xu, A. Kuma, E. Kong, Y. Kang, J. Zhang, C. Wang, H. Xu, C. Sun, and X. Gong, “First demonstration of complementary FinFETs and tunneling FinFETs co-integrated on a 200 mm GeSnOI substrate: a pathway towards future hybrid nano-electronic systems,” to be presented in Symp. on VLSI Tech. 2019 (VLSI 2019), Tokyo, Japan, Jun. 9-14, 2019. (Corresponding Author)

  2. Y. Wu, H. Xu, L.-H. Chua, K. Han, W. Zou, T. Henry, J. Zhang, C. Wang, C. Sun, and X. Gong, “A novel fast-turn-around ladder TLM methodology with parasitic metal resistance elimination and 2×10-10 Ω-cm2 resolution: theoretical design and experimental demonstration,” to be presented in Symp. on VLSI Tech. 2019 (VLSI 2019), Tokyo, Japan, Jun. 9-14, 2019. (Corresponding Author)

  3. S. Xu, K. Han, Y.-C. Huang, Y. Kang, S. M. Panah, Y. Wu, D. Lei, Y. Zhao, X. Gong, and Y.-C. Yeo, “High performance GeSn photodiode on a 200 mm Ge-on-insulator photonics platform for advanced optoelectronic integration with Ge CMOS operating at 2 μm band,” to be presented in Symp. on VLSI Tech. 2019 (VLSI 2019), Tokyo, Japan, Jun. 9-14, 2019. (Corresponding Author)

  4. X. Feng, Y. Li, L. Wang, Z. Y. S. Chen, W. Tan, N. Macadam, G. Hu, X. Gong, T. Hasan, Y. Zhang, A. Thean, and Kah-Wee Ang, “First demonstration of a fully-printed MoS2 RRAM on flexible substrate with ultra-low switching voltage and its application as electronic synapse,” to be presented in Symp. on VLSI Tech. 2019 (VLSI 2019), Tokyo, Japan, Jun. 9-14, 2019. (Corresponding Author)

  5. S. Xu, W. Wang, Y. Dong, Y.-C. Huang, S. M. Panah, H. Wang, X. Gong, and Y.-C. Yeo, “Pseudomorphic GeSn/Ge multiple-quantum-well on silicon for photo detection and modulation at 2 μm wavelength range,” 2019 Optical Fiber Communications Conference (OFC), San Diego CA, USA, Mar. 08-12, 2019.

  6. Y. Wu, L.-H. Chua, W. Wang, K. Han, W. Zou, T. Henry, and X. Gong, “Sub-10-9 Ω-cm2 specific contact resistivity on p-type Ge and GeSn: in-situ Ga doping with Ga ion implantation,” IEEE International Electron Device Meeting 2018 (IEDM 2018), San Francisco, USA, Dec. 1 - 5, 2018, pp. 823. (Corresponding Author)

  7. S. Xu, W. Wang, Y.-C. Huang, Y. Dong, S. M. Panah, H. Wong, X. Gong, and Y.-C. Yeo, “High speed (f3-dB above 10 GHz) photo detection at two-micron-wavelength realized by GeSn/Ge multiple-quantum-well photodiode on a 300 mm Si substrate,” IEEE International Electron Device Meeting 2018 (IEDM 2018), San Francisco, USA, Dec. 1 - 5, 2018, pp. 544. (Corresponding Author)

  8. D. Lei, K. H. Lee, Y. Huang, S. Bao, W. Wang, S. M. Panah, S. Yadav, A. Kumar, Y. Dong, Y. Kang, S. Xu, Y. Wu, C. S. Tan, X. Gong, and Y.-C. Yeo, “Enhanced germanium-tin p-channel FinFET performance using post-metal anneal,” IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Kyoto, Japan, March 13-16, 2018. (Corresponding Author)

  9. Y. Li, Y. Kang, Y. Tong, and X. Gong, “Potential and limitations of HfZrO2-based ferroelectric MOSFET for low power applications,” IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Kyoto, Japan, March 13-16, 2018. (Corresponding Author)

  10. X. Wan, F. Gao, X. Lian, Z. Shi, X. Gong, Y. Guo, and Y. Tong, “Emulating the short-term plasticity and filtering of biological synapses with IZO-based electric-double layer transistors,” IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Kyoto, Japan, March 13-16, 2018.

  11. D. Lei, K. Han, K. H. Lee, Y.-C. Huang, W. Wang, S. Yadav, H. Heliu, S. Xu, Y. Kang, Y. Li, E. Y-J. Kong, C. S. Tan, and X. Gong, “GeSn FinFET with sub-10 nm fin width realized on a 200 mm GeSnOI substrate: lowest SS of 63 mV/decade, highest Gm,int of 900 μS/μm, and high-field μeff of 275 cm2/V·s,” for GeSn P-FETs,” to be presented in Symp. on VLSI Tech. 2018 (VLSI 2018), Honolulu, USA, Jun. 18-22, 2018. (Corresponding Author)

  12. Y. Wu, W. Wang, S. M. Panah, Y. Li, K. Han, L. He, Z. Zhang, D. Lei, S. Xu, Y. Kang, X. Gong, and Y. C. Yeo, “Metal/P-type GeSn contacts with specific contact resistivity down to 4.4×10-10 Ω-cm2,” to be presented in Symp. on VLSI Tech. 2018 (VLSI 2018), Honolulu, USA, Jun. 18-22, 2018. (Corresponding Author)

  13. S. Yadav, A. Kumar, X. S. Nguyen, K. H. Lee, Z. Liu, W. Xing, S. M. Panah, K. Lee, C. S. Tan, E. Fitzgerald, D. Antoniadis, Y.-C. Yeo, and X. Gong, “High mobility In0.30Ga0.70As MOSHEMTs on low threading dislocation density 200 mm Si substrates: A technology enabler towards heterogeneous integration of low noise and medium power amplifiers with Si CMOS”, IEEE International Electron Device Meeting 2017 (IEDM 2017), San Francisco, USA, Dec. 2 - 6, 2017, pp. 421. (Corresponding Author)

  14. Y. Wu, S. Luo, W. Wang, S. M. Panah, D. Lei , X. Gong, G. Liang, Y.-C. Liang, Y. C. Yeo, “Record low specific contact resistivity (1.2×10-9 Ω-cm2) for p-type semiconductors: incorporation of Sn into Ge and in-situ Ga doping,” Accepted in Symp. on VLSI Tech. 2017 (VLSI 2017), Tokyo, Japan, Jun. 5-8, 2017, p. 218-219. (Corresponding Author)

  15. D. Lei, K. H. Lee, S. Bao, W. Wang, S. M. Panah, S. Yadav, A. Kumar, Y. Dong, Y. Kang, S. Xu, Y. Wu, Y.-C. Huang, H. Chung, S. Chu, S. Kuppurao, C. S. Tan, X. Gong, and Y.-C. Yeo. “The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm,int of 807 μS/μm for GeSn P-FETs,” Accepted in Symp. on VLSI Tech. 2017 (VLSI 2017), Tokyo, Japan, Jun. 5-8, 2017, p. 198-199. (Corresponding Author)

  16. A. Kumar, S.-Y. Lee, S. Yadav, K. H. Tan, W. K. Loke, S. Wicaksono, D. Li, S. M. Panah, G. C. Liang, S. F. Yoon, X. Gong, D. Antoniadis, and Y. C. Yeo, “ Enabling low power and high speed OEICs: first monolithic integration of InGaAs n-FETs and GaAs/AlGaAs lasers on Si substrate,” Accepted in Symp. on VLSI Tech. 2017 (VLSI 2017), Tokyo, Japan, Jun. 5-8, 2017, p. 56-57. (Corresponding Author)

  17. Y. Dong, W. Wang, S. Xu, D. Lei, X. Gong, S.-Y. Lee, W.-K. Loke, S.-F. Yoon, G. Liang, and Y.-C. Yeo, “Ge0.9Sn0.1 multiple-quantum-well p-i-n photodiodes for optical communications at 2 μm,” 2017 Optical Fiber Communications Conference (OFC), Los Angeles CA, USA, Mar. 19-23, 2017.

  18. S. Yadav, D. Kohen, X. S. Nguyen, K. H. Lee, X. Gong, D. Antoniadis, E. A. Fitzgerald, Y.-C. Yeo, “In0.30Ga0.70As QW MOSFETs with peak mobility exceeding 3000 cm2/V·s fabricated on Si substrates,” 2016 IEEE Silicon Nanoelectronics Workshop, Honolulu, USA, June 2016, pp. 126. (Corresponding Author)

  19. W. Wang, Y. Dong, S. Y. Lee, W. K. Loke, X. Gong, S.-F. Yoon, G. Liang, Y.-C. Yeo, “Germanium-yin heterojunction phototransistor: Towards high-efficiency low-power photodetection in short-wave infrared range,” Symp. on VLSI Tech. 2016 (VLSI 2016), Honolulu HI, USA, Jun. 13-16, 2016, p. 238.

  20. D. Lei, K. H. Lee, S. Bao, W. Wang, B. Wang, X. Gong, C. S. Tan, and Y.-C. Yeo, “Formation of GeSn-On-Insulator (GeSnOI) substrate using direct wafer bonding,” 2016 Silicon Nanoelectronics Workshop (SNW), Honolulu HI, USA, June 12-13, 2016. (Corresponding Author)

  21. K.-H. Goh, K.-H. Tan, S. Yadav, S.-F. Yoon, G. Liang, X. Gong, and Y.-C. Yeo, “Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack and contact modules,” IEEE International Electron Device Meeting 2015 (IEDM 2015), Washington, DC USA, Dec. 7 - 9, 2015, pp. 394. (Corresponding Author)

  22. S. Yadav, K.-H. Tan, K. H. Goh, S. Subramanian, K. L. Low, N. Chen, B. Jia, S.-F. Yoon, G. Liang, X. Gong, and Y.-C. Yeo, “First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules,” IEEE International Electron Device Meeting 2015 (IEDM 2015), Washington, DC USA, Dec. 7 - 9, 2015, pp. 24. (Corresponding Author)

  23. Y. Dong, W. Wang, S. Y. Lee, D. Lei, X. Gong, W. K. Loke, S.-F. Yoon, G. Liang, and Yee-Chia Yeo, “Avalanche photodiode featuring germanium-tin multiple quantum wells on silicon: extending photodetection to wavelengths of 2 and beyond,” IEEE International Electron Device Meeting 2015 (IEDM 2015), Washington, DC USA, Dec. 7 - 9, 2015, pp. 787.

  24. Annie. S. Yadav. K. H. Goh, X. Gong, and Y.-C. Yeo, “Negative differential resistance due to real space transfer of hot electrons in InGaAs channel MOS-HEMTs,” 46th Semiconductor Interface Specialist Conference, Arlington, VA, USA, Dec. 2 - 5, 2015. (Corresponding Author)

  25. D. Lei, W. Wang, Q. Zhou, Y. Dong, Z. Zhang, J. Pan, X. Gong, G. Liang, E.-S. Tok, and Y.-C. Yeo, “Germanium-tin (Ge0.83Sn0.17) p-MOSFETs with sulfur passivation and sub-250 ˚C process modules,” the 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montreal, Canada, May 17 - 22, 2015. (Corresponding Author)

  26. Z.-P. Ling, R. Yang, J.-W. Chai, S.-J. Wang, Y. Tong, Q. Zhou, X. Gong, D.-Z. Chi, and K.-W. Ang, “Prospect of large scale 2D transition metal dichalcogenides nanophotonics for optical communications,” The 3rd IEEE MTT-S International Wireless Symposium, Shenzhen, China, Mar. 30-Apr. 1, 2015.

  27. Y. Dong, W. Wang, D. Lei, X. Gong, Q. Zhou, S. Y. Lee, W. K. Loke, S.-F. Yoon, G. Liang, and Y.-C. Yeo, “Germanium-tin on silicon p-i-n photodiode with low dark current due to sidewall surface passivation,” 2015 Optical Fiber Communication Conference (OFC), Los Angeles CA, USA, Mar. 22-26, 2015.

  28. X. Gong, Q. Zhou, M. H. S. Owen, X. Xu, D. Lei, S.-H. Chen, G. Tsai, C.-C. Cheng, Y.-R. Lin, C.-H. Wu, C.-H. Ko, and Y.-C. Yeo, “InAlP-Capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate”, IEEE International Electron Device Meeting 2014 (IEDM 2014), San Francisco, CA USA, Dec. 15 - 17, 2014, pp. 231.

  29. Y. Dong, W. Wang, X. Xu, X. Gong, D. Lei, Q. Zhou, Z. Xu, S.-F. Yoon, G. Liang, and Y.-C. Yeo, “Germanium-tin on silicon avalanche photodiode for short-wave infrared imaging,” Symp. on VLSI Tech. 2014 (VLSI 2014), Honolulu HI, USA, Jun. 9 - 12, 2014, pp. 978.

  30. Q. Zhou, C. Zhan, X. Gong, T. K. Chan, T. Osipowicz, S. L. Lim, E. S. Tok, and Y.-C. Yeo, “Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy,” 7th International SiGe Technology and Device Meeting (ISTDM), Singapore, Jun. 2 - 4, 2014.

  31. W. K. Loke, Q. Zhou, X. Gong, M. H. S. Owen, S. Wicaksono, K. H. Tan, Y.-C. Yeo, and S. F. Yoon, “Migration enhanced epitaxy of InGaP on offcut Ge (100) substrate using solid-source molecular beam epitaxy,” 7th International SiGe Technology and Device Meeting (ISTDM), Singapore, Jun. 2 - 4, 2014.

  32. L. Wang, B. Liu, X. Gong, P. Guo, Q. Zhou, L.-H. Chua, W. Zou, C. Hatem, T. Henry, and Y.-C. Yeo, “Self-crystallization and reduced contact resistivity by hot phosphorus ion implant in germanium-tin alloy,” International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 28 - 30, 2014.

  33. D. Lei, C. Zhan, W. Wang, X. Gong, Q. Zhou, E.-S. Tok, and Y.-C. Yeo, “High mobility germanium-tin (Ge0.93Sn0.07) P-MOSFETs with surface passivation by silicon atomic layer epitaxy,” 7th International SiGe Technology and Device Meeting (ISTDM), Singapore, Jun. 2 - 4, 2014.

  34. X. Xu, D. Lei, W. Wang, Y. Dong, X. Gong, and Y.-C. Yeo, “Formation of vertically stacked germanium-tin (Ge1-xSnx) nanowires using a selective dry etch technique,” 7th International SiGe Technology and Device Meeting (ISTDM), Singapore, Jun. 2 - 4, 2014.

  35. B. Liu, X. Gong, R. Cheng, P. Guo, Q. Zhou, M. H. S. Owen, C. Guo, L. Wang, W. Wang, Y. Yang, Y.-C. Yeo, C.-T. Wan, S.-H. Chen, C.-C. Cheng, Y.-R. Lin, C.-H. Wu, C.-H. Ko, and C. H. Wann, “High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications,” IEEE International Electron Device Meeting 2013 (IEDM 2013), Washington, DC USA, Dec. 9 - 11, 2013, pp. 657.

  36. K. H. Goh, Y. Guo, X. Gong, G.-C. Liang, and Y.-C. Yeo, “Near ballistic sub-7 nm In0.53Ga0.47As junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure,” IEEE International Electron Device Meeting 2013 (IEDM 2013), Washington, DC USA, Dec. 9 - 11, 2013, pp. 433.

  37. R. Cheng, B. Liu, P. Guo, Y. Yang, Q. Zhou, X. Gong, D. Yuan, K. Bourdelle, N. Daval, D. Delprat, B.-Y. Nguyen, and Y.-C. Yeo, “Asymmetrically strained high performance germanium gate-all-around nanowire p-FET featuring 3.5 nm wire width and contractable phase change liner stressor (Ge2Sb2Te5),” IEEE International Electron Device Meeting 2013 (IEDM 2013), Washington, DC USA, Dec. 9 - 11, 2013, pp. 653.

  38. Y. Dong, W. Wang, X. Xu, X. Gong, P. Guo, Q. Zhou, L. Wang, G. Han, Z. Xu, S.-F. Yoon, G. Liang, and Y.-C. Yeo, “GeSn metal-semiconductor-metal photodetectors with suppressed dark current by ammonium sulfide surface passivation,” International Conference on Solid-State Devices and Materials (SSDM), Fukuoka, Japan, Sep. 24 - 27, 2013.

  39. W. Wang, Y. Dong, G. Han, P. Guo, X. Gong, X. Xu, Q. Zhou, L. Wang, Z. Xu, W.-K. Loke, S.-F. Yoon, and Y.-C. Yeo, “Dark current reduction for GeSn p-i-n photodetectors using low-temperature Si passivation,” International Conference on Solid-State Devices and Materials (SSDM), Fukuoka, Japan, Sep. 24 - 27, 2013.

  40. X. Xu, W. Wang, Y. Dong, E. Y. J. Kong , X. Gong, Q. Zhou, G. Han, P. Guo, L. Wang, and Y.-C. Yeo, “Epitaxial nickel distanogermanide [Ni(Ge1-xSnx)2] contact formation using pulsed laser annealing,” International Conference on Solid-State Devices and Materials (SSDM), Fukuoka, Japan, Sep. 24 - 27, 2013.

  41. X. Gong, G. Han, S. Su, R. Cheng, P. Guo, F. Bai, Y. Yang, Q. Zhou, K. H. Goh, G. Zhang, C. Xue, B. Cheng, and Y.-C. Yeo, “Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology,” Symp. on VLSI Tech. 2013 (VLSI 2013), Kyoto, Japan, Jun. 11 - 13, 2013, pp. T34.

  42. E. Kong, X. Gong, P. Guo, B. Liu, and Y.-C. Yeo, “Novel technique for conformal, ultra-shallow, and abrupt n++ junction formation for InGaAs MOSFETs,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 22 - 24, 2013.

  43. C. Zhan, W. Wang, X. Gong, P. Guo, B. Liu, Y. Yang, G. Han, and Y.-C. Yeo, “(110)-oriented germanium-tin (Ge0.97Sn0.03) p-channel MOSFETs,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 22 - 24, 2013.

  44. P. Guo, C. Zhan, Y. Yang, X. Gong, B. Liu, R. Cheng, W. Wang, J. Pan, Z. Zhang, E. S. Tok, G. Han, and Y.-C. Yeo, “Germanium-tin (GeSn) n-channel MOSFETs with low temperature silicon surface passivation,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 22 - 24, 2013.

  45. Y. Yang, S. Su, P. Guo, W. Wang, X. Gong, L. Wang, K. L. Low, G. Zhang, C. Xue, B. Cheng, G. Han, and Y.-C. Yeo, “Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn),” IEEE International Electron Device Meeting 2012 (IEDM 2012), San Francisco, CA USA, Dec. 10 - 12, 2012, pp. 379.

  46. R. Cheng, X. Gong, P. Guo, F. Bai, Y. Yang, B. Liu, K. H. Goh, S. Su, G. Zhang, C. Xue, B. Cheng, G. Han, and Y.-C. Yeo, “Top-down GeSn nanowire formation using F-based dry etch and H2O2-based wet etch,” 43rd Semiconductor Interface Specialist Conference, San Diego, CA, USA, Dec. 6 - 8, 2012.

  47. G. Han, X. Gong, F. Bai, R. Cheng, P. Guo, K. H. Goh, S. Su, G. Zhang, C. Xue, B. Cheng, and Y.-C. Yeo, “(111)-oriented strained GeSn channel pMOSFET with low temperature Si2H6 surface passivation,” 43rd Semiconductor Interface Specialist Conference, San Diego, CA, USA, Dec. 6 - 8, 2012.

  48. X. Gong, S. Su, B. Liu, L. Wang, W. Wang, Y. Yang, E. Kong, B. Cheng, G. Han, and Y.-C. Yeo, “Negative bias temperature instability study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 high-k and TaN metal gate,” 222nd Electrochemical Society Meeting, Honolulu, HI USA, Oct. 7 - 12, 2012, ECS Transactions vol. 50, no. 9, pp. 949.

  49. B. Liu, X. Gong, C. Zhan, G. Han, N. Daval, M. Pulido, D. Delprat, B.-Y. Nguyen, and Y.-C. Yeo, “Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor,” 222nd Electrochemical Society Meeting, Honolulu, HI USA, Oct. 7 - 12, 2012, ECS Transactions vol. 50, no. 9, pp. 23.

  50. G. Han, S. Su, Y. Yang, P. Guo, X. Gong, L. Wang, W. Wang, C. Guo, G. Zhang, C. Xue, B. Cheng, and Y.-C. Yeo, “High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate,” 222nd Electrochemical Society Meeting, Honolulu, HI USA, Oct. 7 - 12, 2012, ECS Transactions vol. 50, no. 9, pp. 943.

  51. X. Zhang, H. X. Guo, X. Gong, and Y.-C. Yeo, “A gate-last In0.53Ga0.47As FinFET with molybdenum source/drain contacts,” 42nd European Solid-State Device Research Conference (ESSDERC), Bordeaux, France, Sep. 17 - 21, 2012.

  52. X. Gong, S. Su, B. Liu, L. Wang, W. Wang, Y. Yang, E. Kong, B. Cheng, G. Han, and Y.-C. Yeo, “Towards high performance Ge1-xSnx and In0.7Ga0.3As CMOS: A novel common gate stack featuring sub-400 °C Si2H6 passivation, single TaN metal gate, and sub-1.3 nm EOT,” Symp. on VLSI Tech. 2012 (VLSI 2012), Honolulu, HI USA, Jun. 12 - 14, 2012, pp. 99.

  53. G. Han, S. Su, L. Wang, W. Wang, X. Gong, Y. Yang, Ivana, P. Guo, C. Guo, G. Zhang, J. Pan, Z. Zhang, C. Xue, B. Cheng, and Y.-C. Yeo, “Strained germanium-tin (GeSn) n-channel MOSFETs featuring low temperature n+/p junction formation and GeSnO2 interfacial layer,” Symp. on VLSI Tech. 2012 (VLSI 2012), Honolulu HI, USA, Jun. 12 - 14, 2012, pp. 97.

  54. B. Liu, X. Gong, G. Han, P. S. Y. Lim, Y. Tong, Q. Zhou, Y. Yang, N. Daval, M. Pulido, D. Delprat, B.-Y. Nguyen, and Y.-C. Yeo, “High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic source/drain,” 2012 Silicon Nanoelectronics Workshop (SNW), Honolulu HI, USA, June 10 - 11, 2012.

  55. L. Wang, S. Su, W. Wang, X. Gong, Y. Yang, P. Guo, G. Zhang, C. Xue, B. Cheng, G. Han, and Y.-C. Yeo, “(NH4)2S passivation for high mobility germanium-tin (GeSn) p-MOSFETs,” 6th International SiGe Technology and Device Meeting (ISTDM), Berkeley, CA, USA, June 4 - 6, 2012.

  56. X. Zhang, H. X. Guo, X. Gong, C. Guo, and Y.-C. Yeo, “Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts,” 221st Electrochemical Society Meeting, Seattle, WA USA, May 6 - 11, 2012.

  57. X. Gong, Z. Zhu, E. Kong, R. Cheng, S. Subramanian, K. H. Goh, and Y.-C. Yeo, “Ultra-thin-body In0.7Ga0.3As on nothing N-MOSFET with Pd-InGaAs S/D contacts enabled by a new self-aligned cavity formation technology,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 23 - 25, 2012.

  58. Z. Zhu, X. Gong, Ivana, and Y.-C. Yeo, “In0.53Ga0.47As channel N-MOSFETs with shallow metallic S/D extension,” Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, Nagoya, Japan, Sep. 28 - 30, 2011.

  59. X. Zhang, H. Guo, X. Gong, Q. Zhou, H.-Y. Lin, Y.-R. Lin, C.-H. Ko, C. H. Wann, and Y.-C. Yeo, “In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a silicide-like metallization process,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 25 - 27, 2011.

  60. X. Gong, Ivana, H.-C. Chin, Z. Zhu, and Y.-C. Yeo, “Self-aligned gate-first In0.7Ga0.3As n-MOSFETs with an InP capping layer for performance enhancement,” 41st Semiconductor Interface Specialist Conference, San Diego, CA, USA, Dec. 2 - 4, 2010.

  61. P. Guo, G. Han, Y. Yang, X. Gong, C. Zhan, and Y.-C. Yeo, “Source-channel interface engineering for tunneling field-effect transistor with SiGe source: Insertion of strained Si:C layer for enhancement of tunneling current,” 41st Semiconductor Interface Specialist Conference, San Diego, CA, USA, Dec. 2 - 4, 2010.

  62. X. Zhang, H. Guo, H.-C. Chin, X. Gong, P. S. Y. Lim, and Y.-C. Yeo, “Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs,” 218th Electrochemical Society Meeting, Las Vegas NV, USA, Oct. 10 - 15, 2010.

  63. X. Gong, H.-C. Chin, S.-M. Koh, L. Wang, Ivana, B. Wang, C. K. Chia, and Y.-C. Yeo, “Source/drain engineering for In0.7Ga0.3As N-MOSFETs: Raised source/drain with in situ doping for series resistance reduction,” Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 22 - 24, 2010.

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