Welcome to Gong Xiao's Group

Gong Xiao

Assistant Professor


Dr. Gong Xiao is an Assistant Professor at the National University of Singapore (NUS). He obtained his B. Eng. (Hon.) degree in Electrical Engineering from the Beijing Institute of Technology (BIT), and his Ph. D. degree in Electrical Engineering from NUS in June 2013. He was also a Visiting Scholar at the Massachusetts Institute of Technology (MIT), from May to August 2014. His research aims to enable a new generation of deeply-scaled transistors by employing high-mobility channels with the goal of extending Moore’s law beyond the scaling limits of Si (“More-Moore”) and develop “More-than-More” technologies to provide further value to semiconductor chips by incorporating functionalities that do not necessarily scale according to Moore’s law.

 

Latest Highlight!


    • July 1st, 2021: Congratulations to Ren Tianhua on the acceptance of the paper in Optics Letters entitled “Strong Purcell Effect in Deep Subwavelength Coaxial Cavity with GeSn Active Medium”.

    • June 24th, 2021: Congratulations to Shao Rui. His paper “Robust Training of Optical Neural Network with Practical Errors using Genetic Algorithm: A Case Study in Silicon-on-Insulator-Based Photonic Integrated Chips” was accepted in IEEE ICICDT 2021. Shao Rui is an undergraduate student. His paper is based on his FYP project under the guidance of Dr. Gong.

    • June 24th, 2021: Congratulations to Kaizhen! His recent paper in VLSI Symposium has been selected by the technical program committee as one of the 10 papers to IEEE Transaction on Electron Devices (TED) as solicited papers.
      “First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 µA/µm”.

    • June 4th, 2021: Yuye’s recent work has been selected as the cover letter. Congratulations!

    • June 1st, 2021: Congratulations to Zhang Gong on the acceptance of the paper in PRX Quantum entitled “Securing practical quantum communication systems with optical power limiters”.

    • June 1st, 2021: Congratulations to Kang Yuye on the acceptance of the paper in Nano Letters entitled “Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width”.

    • May 10th, 2021: Congratulations to Zhang Jishen on the acceptance of the paper in Optics Letters entitled “High Performance InGaAs/InAlAs Single-Photon Avalanche Diode with triple-Mesa Structure for Near Infrared Photon Detection”.

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