Welcome to Gong Xiao's Group

Gong Xiao

Assistant Professor

Dr. Gong Xiao is an Assistant Professor at the National University of Singapore (NUS). He obtained his B. Eng. (Hon.) degree in Electrical Engineering from the Beijing Institute of Technology (BIT), and his Ph. D. degree in Electrical Engineering from NUS in June 2013. He was also a Visiting Scholar at the Massachusetts Institute of Technology (MIT), from May to August 2014. His research aims to enable a new generation of deeply-scaled transistors by employing high-mobility channels with the goal of extending Moore’s law beyond the scaling limits of Si (“More-Moore”) and develop “More-than-More” technologies to provide further value to semiconductor chips by incorporating functionalities that do not necessarily scale according to Moore’s law.


Latest Highlights!

    • September 28th, 2021: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE Journal of the Electron Devices Society entitled “Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness”.

    • This year, we have 5 papers accepted in IEDM 2021, including 3 from our group and 2 co-authored ones with Rochester Institute of Technology and Chinese Academy of Sciences. This is the record number of IEDM papers in our group in recent 5 years. Well done! The papers are:
      1.       Al-doped and Deposition Temperature-engineered HfO2 Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68).
      2.       Low-Power and Scalable Retention-Enhanced IGZO TFT eDRAM-Based Charge-Domain Computing.
      3.       First demonstration of monolithic waveguide-integrated group IV multiple-quantum-well photodetectors on 300 mm Si substrate for 2 μm optoelectronic integrated circuits.
      4.       Computational Associative Memory Based on Monolithically Integrated Metal-Oxide Thin Film Transistors for Update-Frequent Search Applications.
      5.       A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application.

    • September 18th, 2021: Congratulations to Shao Rui on clinching the only Best Student Paper Award in the international conference ICICDT 2021. The prize includes a certificate and Euro 500. This is an outstanding achievement for the work done as an undergraduate student. Well done!

    • September 17th, 2021: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors”.

    • August 30th, 2021: Congratulations to Kang Yuye and Han Kaizhen on the acceptance of the paper in IEEE Electron Device Letters entitled “Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs”.