Welcome to Gong Xiao's Group

Gong Xiao

Assistant Professor


Dr. Gong Xiao is an Assistant Professor at the National University of Singapore (NUS). He obtained his B. Eng. (Hon.) degree in Electrical Engineering from the Beijing Institute of Technology (BIT), and his Ph. D. degree in Electrical Engineering from NUS in June 2013. He was also a Visiting Scholar at the Massachusetts Institute of Technology (MIT), from May to August 2014. His research aims to enable a new generation of deeply-scaled transistors by employing high-mobility channels with the goal of extending Moore’s law beyond the scaling limits of Si (“More-Moore”) and develop “More-than-More” technologies to provide further value to semiconductor chips by incorporating functionalities that do not necessarily scale according to Moore’s law.

 

Latest Highlight!


    • June 1st, 2020: Congratulations to Zhou Jiuren and Zhou Zuopu on the acceptance of the paper in IEEE Electron Device Letters entitled “Demonstration of Ferroelectricity in Al-doped HfO2 with a Low Thermal Budget of 500 °C”.

    • May 20th, 2020: Congratulations to Xu Haiwen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “A Ladder Transmission Line Model for Extraction of Ultra-low Specific Contact Resistivity—Part II: Experimental Verification”.

    • April 28th, 2020: Congratulations to Wu Ying on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “A Ladder Transmission Line Model for Extraction of Ultra-low Specific Contact Resistivity—Part I: Theoretical Design and Simulation Study”.

    • April 3rd, 2020: Congratulations to Samanta on the acceptance of the paper in IEEE Electron Device Letters entitled “Improvement in Threshold Switching Performance using Al2O3 Interfacial Layer in Ag/Al2O3/SiOx/W Cross-Point Platform”.

    • April 2nd, 2020: Congratulations to Samanta on the acceptance of the paper in IEEE Electron Device Letters entitled “Low Subthreshold Swing and High Mobility Amorphous-Indium-Gallium-Zinc-Oxide ThinFilm Transistor with Thin HfO2 Gate Dielectric and Excellent Uniformity”.

    • April 1st, 2020: Congratulations to Wu Ying on the acceptance of the paper in VLSI 2020 entitled “Ultra-low ρc Extraction for Recessed and Non-Recessed Contacts: Generalized Transmission Line Model”.

    • April 1st, 2020: Congratulations to Samanta and Han Kaizhen on the acceptance of the paper in VLSI 2020 entitled “Amorphous IGZO TFTs featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 µS/µm at VDS of 1 V and ION of 350 µA/µm”.

    Read More >>

Gong Xiao @copyright