News

  • September 28th, 2021: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE Journal of the Electron Devices Society entitled “Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness”.

  • This year, we have 5 papers accepted in IEDM 2021, including 3 from our group and 2 co-authored ones with Rochester Institute of Technology and Chinese Academy of Sciences. This is the record number of IEDM papers in our group in recent 5 years. Well done! The papers are:
    1.       Al-doped and Deposition Temperature-engineered HfO2 Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68).
    2.       Low-Power and Scalable Retention-Enhanced IGZO TFT eDRAM-Based Charge-Domain Computing.
    3.       First demonstration of monolithic waveguide-integrated group IV multiple-quantum-well photodetectors on 300 mm Si substrate for 2 μm optoelectronic integrated circuits.
    4.       Computational Associative Memory Based on Monolithically Integrated Metal-Oxide Thin Film Transistors for Update-Frequent Search Applications.
    5.       A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application.

  • September 18th, 2021: Congratulations to Shao Rui on clinching the only Best Student Paper Award in the international conference ICICDT 2021. The prize includes a certificate and Euro 500. This is an outstanding achievement for the work done as an undergraduate student. Well done!

  • September 17th, 2021: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors”.

  • August 30th, 2021: Congratulations to Kang Yuye and Han Kaizhen on the acceptance of the paper in IEEE Electron Device Letters entitled “Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs”.

  • July 1st, 2021: Congratulations to Ren Tianhua on the acceptance of the paper in Optics Letters entitled “Strong Purcell Effect in Deep Subwavelength Coaxial Cavity with GeSn Active Medium”.

  • June 24th, 2021: Congratulations to Shao Rui. His paper “Robust Training of Optical Neural Network with Practical Errors using Genetic Algorithm: A Case Study in Silicon-on-Insulator-Based Photonic Integrated Chips” was accepted in IEEE ICICDT 2021. Shao Rui is an undergraduate student. His paper is based on his FYP project under the guidance of Dr. Gong.

  • June 24th, 2021: Congratulations to Kaizhen! His recent paper in VLSI Symposium has been selected by the technical program committee as one of the 10 papers to IEEE Transaction on Electron Devices (TED) as solicited papers.
    “First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 µA/µm”.

  • June 4th, 2021: Yuye’s recent work has been selected as the cover letter. Congratulations!

  • June 1st, 2021: Congratulations to Zhang Gong on the acceptance of the paper in PRX Quantum entitled “Securing practical quantum communication systems with optical power limiters”.

  • June 1st, 2021: Congratulations to Kang Yuye on the acceptance of the paper in Nano Letters entitled “Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width”.

  • May 10th, 2021: Congratulations to Zhang Jishen on the acceptance of the paper in Optics Letters entitled “High Performance InGaAs/InAlAs Single-Photon Avalanche Diode with triple-Mesa Structure for Near Infrared Photon Detection”.

  • April 1st, 2021: Congratulations to Wang Haibo on the acceptance of the paper in VLSI 2021 entitled “First Demonstration of Waveguide-Coupled Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on the SOI Platform for 2000 nm Wavelength Optoelectronic Integrated Circuit”.

  • April 1st, 2021: Congratulations to Sun Chen on the acceptance of the paper in VLSI 2021 entitled “First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 108 Cycles”.

  • April 1st, 2021: Congratulations to Xu Haiwen on the acceptance of the paper in VLSI 2021 entitled “Ultra-low Specific Contact Resistivity (3.2*10-10 ohm-cm2) of Ti/Si0.5Ge0.5 Contact Deep Insights into the Role of Interface Reaction and Ga Co-doping”.

  • April 1st, 2021: Congratulations to Zhang Jishen on the acceptance of the paper in VLSI 2021 entitled “First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection”.

  • April 1st, 2021: Congratulations to Han Kaizhen on the acceptance of the paper in VLSI 2021 entitled “First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 µA/µm”.

  • April 1st, 2021: Congratulations to Wang Haibo on the acceptance of the paper in Optics Letters entitled “High-speed and high-responsivity p-i-n waveguide photodetector at 2 μm wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layer”.

  • Feburary 14th, 2021: Congratulations to Zhang Jishen on the acceptance of the paper in CLEO 2021 entitled “Triple-Mesa InGaAs/InAlAs Single-Photon Avalanche Diode Array for 1550 nm Photon Detection”.

  • Feburary 10th, 2021: Congratulations to Sun Chen, Xu Haiwen and Liang Jie on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Strained Silicon-on-Insulator Platform for Co-integration of Logic and RF—Part I: Implant-Induced Strain Relaxation”.

  • December 30th, 2020: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE EDTM 2021 entitled “Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness”.

  • December 30th, 2020: Congratulations to Samanta and Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Amorphous InGaZnO Thin-Film Transistors with Sub-10 nm Channel Thickness and Ultra-Scaled Channel Length”.

  • December 4th, 2020: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Hybrid Design using Metal-Oxide-Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications”.

  • November 1st, 2020: Congratulations to Han Kaizhen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “High Field Temperature Independent Field-Effect Mobility of Amorphous-Indium-Gallium-Zinc-Oxide Thin Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Down-Scaling”.

  • October 31st, 2020: Congratulations to Zhou Zuopu and Zhou Jiuren on the acceptance of the paper in IEEE Electron Device Letters entitled “A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOx Ferroelectric Film”.

  • October 16th, 2020: Congratulations to Zhou Jiuren and Zhou Zuopu on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “Temperature Dependence of Ferroelectricity in Al-doped HfO2 Featuring a High Pr of 23.7 μC/cm2”.

  • October 2nd, 2020: Dr. Gong was invited to give an invited talk at 11th International Conference on Computer Aided Design for TFT Technologies (CAD-TFT), which is to be held virtually during November 9th to 11th, 2020.

  • September 11th, 2020: Warmly welcome Chen Guanyu, Kong Qiwen, Chen Yue and Zheng Zijie to join our group!

  • August 18th, 2020: Congratulations to Zhang Ziyue on the acceptance of the paper in IEEE Electron Device Letters entitled “A Novel Silicon-Air-Silicon Through-Silicon-Via Structure Realized Using Double-Side Partially Overlapping Etching”.

  • June 1st, 2020: Congratulations to Zhou Jiuren and Zhou Zuopu on the acceptance of the paper in IEEE Electron Device Letters entitled “Demonstration of Ferroelectricity in Al-doped HfO2 with a Low Thermal Budget of 500 °C”.

  • May 20th, 2020: Congratulations to Xu Haiwen on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “A Ladder Transmission Line Model for Extraction of Ultra-low Specific Contact Resistivity—Part II: Experimental Verification”.

  • April 28th, 2020: Congratulations to Wu Ying on the acceptance of the paper in IEEE Transactions on Electron Devices entitled “A Ladder Transmission Line Model for Extraction of Ultra-low Specific Contact Resistivity—Part I: Theoretical Design and Simulation Study”.

  • April 3rd, 2020: Congratulations to Samanta on the acceptance of the paper in IEEE Electron Device Letters entitled “Improvement in Threshold Switching Performance using Al2O3 Interfacial Layer in Ag/Al2O3/SiOx/W Cross-Point Platform”.

  • April 2nd, 2020: Congratulations to Samanta on the acceptance of the paper in IEEE Electron Device Letters entitled “Low Subthreshold Swing and High Mobility Amorphous-Indium-Gallium-Zinc-Oxide ThinFilm Transistor with Thin HfO2 Gate Dielectric and Excellent Uniformity”.

  • April 1st, 2020: Congratulations to Wu Ying on the acceptance of the paper in VLSI 2020 entitled “Ultra-low ρc Extraction for Recessed and Non-Recessed Contacts: Generalized Transmission Line Model”.

  • April 1st, 2020: Congratulations to Samanta and Han Kaizhen on the acceptance of the paper in VLSI 2020 entitled “Amorphous IGZO TFTs featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 µS/µm at VDS of 1 V and ION of 350 µA/µm”.

  • April 1st, 2020: Congratulations to Xu Haiwen on the acceptance of the paper in VLSI 2020 entitled “Surface Ga-boosted Boron-doped Si0.5Ge0.5 using In-situ CVD Epitaxy: Achieving 1.1 × 1021 cm-3 Active Doping Concentration and 5.7× 10-10 Ω-cm2 Contact Resistivity”.

  • April 1st, 2020: Congratulations to Sun Chen and Liang Jie on the acceptance of the paper in VLSI 2020 entitled “Enabling UTBB Strained SOI Platform for Co-integration of Logic and RF: Implant-Induced Strain Relaxation and Comb-like Device Architecture”.

  • Dr. Gong was invited to serve as the member of technical program committee of EDTM 2020 to be held from March 16 to 18 in Penang, Malaysia.

  • Dr. Gong was invited to serve as the member of executive committee of ICICDT 2020 to be held in July 2020 in Hang Zhou, China.

  • Dr. Gong was invited to serve as the chair of the FET session in the Symposium of ‘SiGe, Ge, and Related Compounds’ in ECS 2020 to be held from October 4 to 9, 2020 in Hawaii, USA.

  • Dr. Gong was invited to give an invited talk in ECS 2020 to be held from October 4 to 9, 2020 in Hawaii, USA.

  • Dr. Gong was invited to give an invited talk in 2020 IEEE Photonics Society Summer Topical Meeting Series (SUM) to be held in Los Cabos, Baja California Sur, Mexico from 13th to 15th of July 2020.

  • Dr. Gong was invited to give an invited talk in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference to be held in October 2020 in San Jose, USA.

  • December 20th, 2019: Warmly welcome postdoctor Chandan Das to join our group!

  • October 13th, 2019: Congratulations to Saeid for his paper being accepted by Journal of Materials Chemistry A (JMCA) with title ‘A high-performance cupric oxide photocatalyst with palladium light trapping nanostructures and a hole transporting layer for photoelectrochemical hydrogen evolution’!

  • October 12th, 2019: Warmly welcome Han Kai and Zhou Jiuren to join our group!

  • August 27th, 2019: Warmly welcome Liang Jie and Zhang Gong to join our group!

  • Dr. Gong was invited to give a talk at the 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII) to be held in Sendai, Japan, on Nov. 27-30, 2019.

  • Congratulations to Wu Ying on the acceptance of the paper in IEEE Electron Device Letters entitled “Thermal Stability and Sn Segregation of Low-Resistance Ti/p-Ge0.95Sn0.05 Contact”.

  • July 20th, 2019: Warmly welcome Zhou Zuopu to join our group!

  • July 9th, 2019: Warmly welcome Wang Haibo to join our group!

  • June 19th, 2019: Congratulations to Sun Chen for getting the Best Paper Award in ICICDT 2019

  • June 4th, 2019: Warmly welcome postdoctor Wang Xinke to join our group!

  • May 27th, 2019: Warmly welcome visiting professor Zhang Lujun to join our group!

  • May 1st, 2019: Congratulations to Sun Chen on the acceptance of the paper in ICICDT 2019 entitled “Performance Evaluation of Static Random Access Memory (SRAM) based on Negative Capacitance FinFET”.

  • Congratulations to Lei Dian on the acceptance of the paper in Journal of Electron Device Society (JEDS) entitled “High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate”.

  • Dr. Gong was invited to give a talk in the MRS Fall 2019 to be held in Boston, USA from December 1 to 6, 2019.

  • Dr. Gong was invited to be the Technical Program Chair in ICICDT 2019 to be held from June 17 to 19 in Su Zhou, China.

  • Dr. Gong was invited to give a talk in IWJT 2019 to be held from June 6-7, 2019 in Kyoto, Japan.

  • Dr. Gong gave an invited talk at CS International Conferences in Brussels, Belgium from March 26-27, 2019.

  • Congratulations to Eugene Kong for his paper being accepted by TED with title ‘Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance’!

  • March 19th, 2019: Congratulations to Wu Ying, Xu Shengqiang, and Han Kaizhen on the acceptance of their 3 papers on VLSI symposium 2019!

  • Janurary 7th, 2019: Warmly welcome Sun Chen and Zhang Ziyue to join our group!

  • July 21st, 2018: Warmly welcome Xu Haiwen, Zhang Jishen, Wang Chengkuan to join our group!

  • July 11th, 2017: Warmly welcome Han Kaizhen to join our group!

  • June 30th, 2017: Congratulations to Dr. Dong Yuan on the acceptance of his paper in Optics Express!

  • June 30th, 2017: Congratulations to Dr. Wei Wang on the acceptance of his paper in Applied Surface Science!

  • May 20th, 2017: Dr. Gong Xiao was invited to give an invited talk at Materials Research Society Spring Meeting, Phoenix, U.S.A., April 3-6, 2018.

  • May 20th, 2017: Dr. Gong Xiao was invited to deliver an invited talk for the EMN Meeting on Epitaxy 2017 at Barcelona, Spain from September 11 to 15, 2017.

  • April 3rd, 2017: Annie Kumar’s paper has been highlighted by Semiconductor Today! Congratulations!

  • March 31st, 2017: Congratulations to Dr. Wei Wang on the acceptance of his paper on Scientific Report!

  • March 19th, 2017: Congratulations to Dr. Yuan Dong on the great presentation in OFC 2017!

  • March 14th, 2017: Congratulations to Dian Lei, Annie Kumar, and Wu Ying on the acceptance of their 3 papers on VLSI symposium 2017!